德国针尖电子束光刻系统 P-SPL21 

ParcanNano 公司以全球独家专利的针尖技术为核心竞争力，技术源自于德国伊尔默瑙工业大学，致力于主动式针尖技术在微纳米结构制备和表征方面的研发，及其相关设备的产业化。公司研制一套基于扫描针尖低能电子场发射的原理、采用压阻式微纳米针尖和多维纳米定位与测量技术、在半导体器件材料表面制造尺寸小于5纳米线宽结构的高性能微纳加工系统。公司致力于为微纳米制造企业提供制备微纳米功能结构和功能器件（比如最高速且最省电的基于单电子器件的芯片）的高性能设备和技术服务。

利用探针在近光刻胶表面发射低能电子的原理实现光刻效果。该系统的主要特点在于：

（1）几乎无邻近效 应，能实现 3-5nm 线宽的超精细光刻结构；

（2）用于发射电子的探针同时具有原子力显微镜功能，能够实现亚纳米级精准定位并原位测量曝光图型；

（3）超高写场拼接精度（≤2nm），且能够抑制电子束长时间产生的空间漂移（≤5nm）。百及纳米科技的探针电子束光刻系统能够实现光刻与原子力 显微镜表征的双重功能，是一款理想的用于微纳制造和表征尺寸小于 5nm 线宽结构的一体化系统。

尤其是针对二维材料，探针的电子束场发射可以直接辐照在二维材料（如 MoS2，石墨烯等）表面形成感光反应，去除曝光区的二维材料，直接显影并呈现出预设的超精细结构，达到无需使用电子束光刻胶而直接转移图形的效果。 

A single probe electron beam lithography system P-SPL21

The lithography effect is achieved by the low energy electron emission from the probe near the photoresist surface. The main characteristics of the system are:

(1) With almost no proximity effect, the hyperfine lithography structure with a linewidth of 3-5nm can be realized;

(2) The probe used for emitting electrons also has the function of atomic force microscopy, which can realize accurate positioning and in situ measurement of the exposure pattern at the sub-nanometer level;

(3) Ultra-high write field stitching accuracy (≤2nm), and can suppress the spatial drift generated by the electron beam for a long time (≤5nm). B&n's probe electron beam lithography system can realize the dual function of lithography and AFM characterization. It is an ideal integrated system for micro-nano fabrication and characterization of structures with linewidth less than 5nm.

Especially for two-dimensional materials, the electron beam field emission of the probe can directly irradiate the surface of two-dimensional materials (such as MoS2, graphene, etc.) to form a photosensitive reaction, remove the two-dimensional materials in the exposure area, directly develop and present the preset hyperfine structure, so as to achieve the effect of directly transferring the pattern without using electron beam photoresist.