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半导体辅助工艺 > 高温退火炉
 
AS-ONE 高温退火炉
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法国Annealsys 高温退火炉AS-ONE, 多用途快速热处理设备,适用于硅,化合物半导体,太阳能电池& MEMS.

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法国Annealsys 高温退火炉AS-ONE

 

Versatile Rapid Thermal Processing system for silicon, compound semiconductors, solar cells & MEMS 多用途快速热处理设备,适用于硅,化合物半导体,太阳能电池& MEMS

 

Up to 1450°C (100HT version), up to 200°C/s, high vacuum capability, fast cooling option 最高温度到1450℃(100HT版本), 升温速率最大200℃/s, 高真空性能,快速冷却选项

 

Applications 应用

. Implant annealing  注入退火

. Ohmic contact annealing (III-V and SiC) 欧姆接触退火(III-V 和SiC)

. Rapid Thermal Oxidation (RTO) 快速热氧化(RTO)

. Rapid Thermal Nitridation (RTN)  快速热氮化 (RTN)

. Selenization (CIGS solar cells)  硒化(CIGS太阳能电池) 

. CVD of graphene 石墨烯CVD

. Silicon carbonization 碳化硅

. Sol-gel densification and crystallization 溶胶凝胶致密性和结晶化

. Diffusion from spin-on dopants 从旋涂掺杂物扩散 

.Etc. 等等

 

Substrate types 基片类型

• Silicon wafers硅片

• Compound semiconductor wafers化合物半导体基片

• GaN/Sapphire wafers for LEDs 用于LED的GaN/蓝宝石基片

• Silicon carbide wafers碳化硅基片

• Poly silicon wafers for solar cells用于太阳能电池的多晶硅基片

• Glass substrates玻璃基片

• Metals金属

• Polymers聚合物

• Graphite and silicon carbide susceptors石墨和镀碳化硅的石墨基片托

• Etc等等

 

Key Features 主要特性

• Infrared halogen tubular lamp furnace with silent fan cooling •配有无声风扇冷却的红外卤素管灯退火炉

• Stainless steel cold wall chamber technology •不锈钢冷壁腔室技术

• Fast digital PID temperature controller •快速数字PID温度控制器

• Thermocouple and pyrometer control •热电偶和高温计控制

• Atmospheric and vacuum process capability •常压和真空下工艺性能

• Purge gas line with needle valve •配有针阀的吹扫气路

• Up to 5 process gas lines with digital MFC •最多5路工艺气路配有数字MFC控制器

• PC control with Ethernet communication for fast data logging •配有以太网通讯的PC控制,用于快速数据记录

• Optional turbo pump and pressure control •可选分子泵和压力控制

 

Floor standing system for reduced footprint 减少占地空间的立式设备

 

Reactor design 反应器设计

Stainless steel cold wall chamber advantages 不锈钢冷壁优势

Chamber design advantages 腔室设计优势

 

Reactor design 反应器设计

Process gases are injected underneath the quartz window for uniform gas flow distribution and to avoid cold points on the wafer. They are pumped down through the bedplate on the opposite side 工艺气体从底部石英窗注入,可均匀气流分布,避免基片上的冷点,在对面的底板处抽走。

 

Reactor design 反应器设计

Full access for chamber loading, thermocouple installation and cleaning if needed 可根据需求进行自由的腔室装载,热电偶安装及清洁

 

Reactor design 反应器设计

Easy sample loading with clamshell configuration 带盖配置可实现便捷的样品装载

Easy and fast installation of quartz pins for different substrate sizes 方便快捷的安装用于不同基片尺寸的石英针

Furnace control 退火炉控制

Temperature control 温度的控制

Pulse power control 脉冲功率控制

 

Options: fast cooling system 选配:快速冷却系统

Process heating position: wafer held by quartz pins 工艺加热位置:基片由石英针支撑

 

Options: fast cooling system 选配:快速冷却系统

Fast cooling position: wafer in contact with water-cooled bedplate 快速冷却位置:基片接触水冷底板

 

Comparison between standard cooling and fast cooling in AS-One 100 AS-One 100设备标准冷却和快速冷却对比

 

Acceleration of the cooling rate in AS-One 100 Example with susceptor WITHOUT contact with the water cooled bedplate AS-One 100设备加速冷却率 以基片托不接触水冷底板为例

4-inch susceptor with 3-inch cavity Accelerated cooling WITHOUT contact with the bedplate Cooling is accelerated by putting the susceptor close to the bedplate and injecting gas 带有3英寸凹槽的4英寸基片托,快速冷却,无需接触底板,通过使基片托与底板和 注入气体接触实现快速冷却。 Cooling rate up to 4 times faster compared to standard RTP furnace 较标准RTP火炉,冷却速度快4倍

 

Selenization kit for photovoltaic applications In situ vaporization of solid Se or S 应用于光电领域的硒化装置 原地蒸发固态Se 或 S

Temperature gradient control between crucible for Se/S vaporization and substrate Several configurations available 坩埚中Se/S蒸发和基片的温度梯度控制 可选多种配置

 

Special options: automatic opening 特殊选配:自动开启 Automatic pneumatic opening system (bi-manual control for closing with user safety) 自动气动开启系统 (考虑到用户安全,需双手控制关闭)

 

Standard Vacuum and Gas configuration 标准真空和气体结构

 

Turbo pump configuration 分子泵泵配置

 

Vacuum and gas 真空和气体

 

 

 

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